Invention Grant
- Patent Title: Apparatus and method for cleaning semiconductor substrate
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Application No.: US14271679Application Date: 2014-05-07
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Publication No.: US09761466B2Publication Date: 2017-09-12
- Inventor: Yoshihiro Ogawa , Hajime Onoda , Hiroshi Kawamoto
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-219111 20090924
- Main IPC: H01L21/67
- IPC: H01L21/67 ; B08B3/02 ; C11D11/00 ; H01L21/02

Abstract:
A cleaning apparatus for a semiconductor substrate includes a belt conveyor, a treatment head that executes cleaning, rinsing and drying treatments, a rinse water supplying mechanism that supplies rinse water adjusted to a predetermined pH value to the treatment head and configured to rinse the substrate applies heat to the rinse water to set a rinse water temperature to 70° or above, and an optical mechanism. The treatment head is configured to rinse the substrate. The optical mechanism is configured to recognize a pattern on the semiconductor substrate so that the semiconductor substrate can be automatically placed on the belt conveyor with a direction of the recognized pattern and a feeding direction of the belt conveyor having a predetermined relationship. The treatment head includes a drying treatment mechanism configured to execute both a drying treatment with use of drying solvent and lamp annealing in execution of drying treatment.
Public/Granted literature
- US20140238452A1 APPARATUS AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE Public/Granted day:2014-08-28
Information query
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