Invention Grant
- Patent Title: Semiconductor device having buried region and method of fabricating same
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Application No.: US14683710Application Date: 2015-04-10
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Publication No.: US09761656B2Publication Date: 2017-09-12
- Inventor: Yu-Chin Chien , Ching-Lin Chan
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/06 ; H01L29/739 ; H01L29/861 ; H01L29/78 ; H01L29/10
Abstract:
A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and formed in the substrate, a drift region formed in the high-voltage well, a drain region formed in the high-voltage well and spaced apart from the drift region, and a buried region having the first conductivity type formed in the high-voltage well between the drift region and the drain region.
Public/Granted literature
- US20160300903A1 SEMICONDUCTOR DEVICE HAVING BURIED REGION AND METHOD OF FABRICATING SAME Public/Granted day:2016-10-13
Information query
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