Invention Grant
- Patent Title: Method for producing an optoelectronic semiconductor chip with reflective electrode
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Application No.: US14423066Application Date: 2013-08-22
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Publication No.: US09761772B2Publication Date: 2017-09-12
- Inventor: Alexander Pfeuffer
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater Matsil, LLP
- Priority: DE102012107921 20120828
- International Application: PCT/EP2013/067445 WO 20130822
- International Announcement: WO2014/033041 WO 20140306
- Main IPC: H01L33/60
- IPC: H01L33/60 ; H01L33/40 ; H01L33/44 ; H01L33/00 ; H01L33/54 ; H01L33/62 ; H01L33/38
Abstract:
A method for producing an optoelectronic semiconductor chip is disclosed. In some embodiment the method includes arranging a metallic mirror layer on a top side of a semiconductor layer sequence, arranging a mirror protection layer at least on exposed lateral surfaces of the mirror layer in a self-aligning manner, wherein the mirror layer has openings toward the semiconductor layer sequence, and wherein the openings are framed in lateral directions by the mirror protection layer and partially removing the semiconductor layer sequence in a region of the openings of the mirror layer.
Public/Granted literature
- US20150255692A1 Method for Producing an Optoelectronic Semiconductor Chip with Reflective Electrode Public/Granted day:2015-09-10
Information query
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