Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15340885Application Date: 2016-11-01
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Publication No.: US09762048B2Publication Date: 2017-09-12
- Inventor: Takahide Tanaka , Masaharu Yamaji
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: Rabin & Berdo, P.C.
- Priority: JP2015-244685 20151215
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H02H3/28 ; H01L29/40 ; H01L49/02 ; H01L27/06 ; H01L27/02 ; H02H1/00 ; G01R19/165

Abstract:
A first sense resistor is connected between a fourth terminal of a power source potential of a high-potential region and a first terminal of a ground potential. A second sense resistor is connected between a third terminal of a reference potential of the high-potential region and the first terminal. A comparator is disposed in a low-potential region and uses the ground potential as a reference potential for operation. The comparator compares a voltage between an intermediate potential point of the first sense resistor and an intermediate potential point of the second sense resistor with a predetermined reference voltage. The output of the comparator is input through a control circuit and a level shift circuit to a high-side drive circuit driving an upper-arm IGBT. The output of the comparator is input to a driver circuit driving a lower-arm IGBT.
Public/Granted literature
- US20170170647A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-06-15
Information query
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