Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14556597Application Date: 2014-12-01
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Publication No.: US09762232B2Publication Date: 2017-09-12
- Inventor: Yu Yonezawa , Yoshiyasu Nakashima
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2013-272729 20131227
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H03K17/16

Abstract:
A semiconductor device includes: a first field-effect transistor configured to have a source connected to a reference potential node; a second field-effect transistor configured to have a source connected to a drain of the first field-effect transistor, and a gate connected to the source of the first field-effect transistor; a gate signal node configured to input a gate signal therein; a first resistor configured to be connected between the gate signal node and a gate of the first field-effect transistor; and a first capacitor and a switch circuit configured to be connected between a drain of the second field-effect transistor and the gate of the first field-effect transistor, in which the switch circuit is connected in series with the first capacitor.
Public/Granted literature
- US20150188534A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-07-02
Information query
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