Invention Grant
- Patent Title: Plasma processing apparatus and film formation method
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Application No.: US15117804Application Date: 2015-02-23
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Publication No.: US09765430B2Publication Date: 2017-09-19
- Inventor: Takehisa Saito , Takenao Nemoto , Koji Yamagishi , Hiroshi Kaneko
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2014-047308 20140311; JP2015-016383 20150130
- International Application: PCT/JP2015/000863 WO 20150223
- International Announcement: WO2015/136852 WO 20150917
- Main IPC: C23C16/34
- IPC: C23C16/34 ; C23C16/511 ; H01L43/12 ; H01J37/32 ; C23C16/455 ; H01L21/02 ; C23C16/44

Abstract:
A plasma processing apparatus for alternately performing a first plasma processing step using first and second processing gases and a second plasma processing step using third and fourth processing gases. The apparatus includes: a processing container that has a dielectric window in a ceiling and removably accommodates a workpiece; an exhaust unit that evacuates the processing container; a processing gas supply unit that supplies the first, second, third, and fourth processing gases into the processing container; a first gas introduction unit including a top plate gas injection port, a dielectric window gas flow path, and a first external gas flow path; a second gas introduction unit including a sidewall gas injection port, a sidewall gas flow path, and a second external gas flow path; an electromagnetic wave supply unit that supplies electromagnetic waves into the plasma generating space; a bypass exhaust path; and an opening/closing valve.
Public/Granted literature
- US20170009338A1 PLASMA PROCESSING APPARATUS AND FILM FORMATION METHOD Public/Granted day:2017-01-12
Information query
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