Invention Grant
- Patent Title: Plasma processing apparatus
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Application No.: US14349807Application Date: 2012-10-03
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Publication No.: US09767993B2Publication Date: 2017-09-19
- Inventor: Kiyotaka Ishibashi , Osamu Morita
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2011-223331 20111007; JP2011-223334 20111007; JP2011-223335 20111007
- International Application: PCT/JP2012/006331 WO 20121003
- International Announcement: WO2013/051248 WO 20130411
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306 ; H01J37/32 ; C23C16/455 ; C23C16/511 ; H05H1/46

Abstract:
This microwave plasma processing apparatus has, as a gas introduction mechanism for introducing a working gas inside a chamber (10), electrical discharge prevention members (96(1) to 96(8)), each of which is provided to a plurality of dielectric window gas passages (94(1) to (94(8)) through which a dielectric window (54) passes. Each electrical discharge prevention member (96(n)), a portion (114) of which protrudes only a height h, which is greater than or equal to a predetermined distance H, upward from the rear surface of a dielectric window (52) on the inlet side, passes through an opening (54a) of a slot plate (54), and inserts into a branched gas supply path (92(n)) of a gas branch part (90). The gas branch part (90), spring coils (116) and the slot plate (54), which surround the protruding portion (114) of each electrical discharge prevention member (96(n)), constitute an enclosing conductor (118).
Public/Granted literature
- US20140262034A1 PLASMA PROCESSING APPARATUS Public/Granted day:2014-09-18
Information query
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