Invention Grant
- Patent Title: Film for semiconductor back surface and its use
-
Application No.: US15168847Application Date: 2016-05-31
-
Publication No.: US09768050B2Publication Date: 2017-09-19
- Inventor: Naohide Takamoto , Ryuichi Kimura
- Applicant: NITTO DENKO CORPORATION
- Applicant Address: JP Ibaraki-shi, Osaka
- Assignee: NITTO DENKO CORPORATION
- Current Assignee: NITTO DENKO CORPORATION
- Current Assignee Address: JP Ibaraki-shi, Osaka
- Agency: Sughrue Mion, PLLC
- Priority: JP2015-111442 20150601
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L21/78 ; H01L23/00 ; H01L23/544 ; H01L21/56
Abstract:
It is an object of the present invention to provide a film for semiconductor back surface having reworkability, and an application of the film. A film for semiconductor back surface has: an adhering strength at 70° C. of 7 N/10 mm or less to a wafer before the film is thermally cured; and a rupture elongation at 25° C. of 700% or less. The film for semiconductor back surface preferably has a degree of swelling due to ethanol of 1% by weight or more. The film for semiconductor back surface preferably contains an acrylic resin.
Public/Granted literature
- US20160351432A1 FILM FOR SEMICONDUCTOR BACK SURFACE AND ITS USE Public/Granted day:2016-12-01
Information query
IPC分类:
