High voltage devices and methods for forming thereof are disclosed. A high voltage device includes a substrate having a device region, where the device region includes a source region and a drain region defined thereon. A transistor is disposed on the device region. The transistor includes a gate disposed over the substrate and in between the source and drain regions. First and second device wells are disposed in the substrate within the device region. The first device well is adjacent to a second side of the gate and the second device well is adjacent to a first side of the gate. Isolation regions are disposed within the substrate. The isolation regions include a device isolation region surrounding the device region and one or more isolation fingers disposed in a first portion of the device region adjacent to the first side of the gate.