Invention Grant
- Patent Title: Integrated circuits (ICS) on a glass substrate
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Application No.: US14861958Application Date: 2015-09-22
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Publication No.: US09768109B2Publication Date: 2017-09-19
- Inventor: Shiqun Gu , Daeik Daniel Kim , Matthew Michael Nowak , Jonghae Kim , Changhan Hobie Yun , Je-Hsiung Jeffrey Lan , David Francis Berdy
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated-Toler
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/84 ; H01L21/8234 ; H01L21/304 ; H01L27/088 ; H01L27/12 ; H01L23/66 ; H01L21/306

Abstract:
An integrated circuit (IC) includes a first semiconductor device on a glass substrate. The first semiconductor device includes a first semiconductive region of a bulk silicon wafer. The IC includes a second semiconductor device on the glass substrate. The second semiconductor device includes a second semiconductive region of the bulk silicon wafer. The IC includes a through substrate trench between the first semiconductive region and the second semiconductive region. The through substrate trench includes a portion disposed beyond a surface of the bulk silicon wafer.
Public/Granted literature
- US20170084531A1 INTEGRATED CIRCUITS (ICS) ON A GLASS SUBSTRATE Public/Granted day:2017-03-23
Information query
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