A solid-state image sensing device including a pixel array including a plurality of pixels, wherein each pixel comprises a photoelectric conversion portion arranged in a substrate and a microlens arranged thereon, an insulating member is arranged between the substrate and the microlens, each pixel further comprises a light-guide portion configured to guide incident light to the photoelectric conversion portion, the pixel array includes a central region and a peripheral region, in a pixel located in the peripheral region, the microlens is arranged while being shifted to a side of the central region with respect to the photoelectric conversion portion, and, on a cross section along the shift direction, the microlens has a left-right asymmetric shape and a highest portion of the microlens is located on the side of the central region.