Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US14140352Application Date: 2013-12-24
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Publication No.: US09768228B2Publication Date: 2017-09-19
- Inventor: Yuta Oka
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-Shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-Shi
- Agency: Foley & Lardner LLP
- Priority: JP2012-283270 20121226; JP2013-235228 20131113
- Main IPC: H01L27/16
- IPC: H01L27/16 ; H01L27/02 ; H01L25/075 ; H01L33/62 ; H01L33/60

Abstract:
The present invention relates to a semiconductor device, including: a substrate; a plurality of first semiconductor elements and a second semiconductor element arranged on a mount area of the substrate; an external electrode to supply electricity to the first and second semiconductor elements; and a frame of reflective material formed at a periphery of the mount area. Extensions of the first external electrodes are formed at the inner side of the plurality of wirings, and the first external electrodes are formed along the periphery of the mount area at the outer side of at least one of the second external electrodes or the wiring connected to the second external electrodes, and electrodes of the plurality of first semiconductor elements are electrically connected to the pair of first external electrodes by a bonding wire that bridges across at least one of the pair of the second external electrodes or the wiring electrically connected to the pair of second external electrodes with intervening a part of the frame therebetween.
Public/Granted literature
- US20140175595A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-06-26
Information query
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