Invention Grant
- Patent Title: Laterally-graded doping of materials
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Application No.: US14685243Application Date: 2015-04-13
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Publication No.: US09768274B2Publication Date: 2017-09-19
- Inventor: Wayne B. Grabowski , Kuo-Chang Yang , Kamal Raj Varadarajan , Sujit Banerjee , Vijay Parthasarathy
- Applicant: Power Integrations, Inc.
- Applicant Address: US CA San Jose
- Assignee: Power Integrations, Inc.
- Current Assignee: Power Integrations, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Christensen O'Connor Johnson Kindness PLLC
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/266 ; H01L21/265 ; H01L21/225 ; H01L29/40 ; H01L29/78 ; H01L29/06 ; H01L29/08

Abstract:
A method includes defining, on a surface of a material, a plurality of discrete portions of a surface as surface elements having at least one of a laterally-varying size, a laterally-varying shape, and a laterally-varying spacing. A plurality of portions of the material beneath the surface elements are doped with a single quantity of dopant material per element area. The dopant material within the material beneath the surface elements expands to provide a lateral gradient of dopant material in the material beneath the surface elements.
Public/Granted literature
- US20160149018A1 LATERALLY-GRADED DOPING OF MATERIALS Public/Granted day:2016-05-26
Information query
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