Invention Grant
- Patent Title: Semiconductor device having a non-depletable doping region
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Application No.: US15196838Application Date: 2016-06-29
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Publication No.: US09768291B2Publication Date: 2017-09-19
- Inventor: Franz Hirler
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102015110484 20150630
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/10 ; H01L29/36 ; H01L29/40 ; H01L29/66 ; H01L29/73 ; H01L29/739 ; H01L21/266
Abstract:
A semiconductor device includes a plurality of compensation regions of a vertical electrical element arrangement, a plurality of drift regions of the vertical electrical element arrangement and a non-depletable doping region. The compensation regions of the plurality of compensation regions are arranged in a semiconductor substrate of the semiconductor device. Further, the plurality of drift regions of the vertical electrical element arrangement are arranged in the semiconductor substrate within a cell region of the semiconductor device. The plurality of drift regions and the plurality of compensation regions are arranged alternatingly in a lateral direction. The non-depletable doping region extends laterally from an edge of the cell region towards an edge of the semiconductor substrate. The non-depletable doping region has a doping non-depletable by voltages applied to the semiconductor device during blocking operation.
Public/Granted literature
- US20170005192A1 Semiconductor Device and Methods for Forming a Semiconductor Device Public/Granted day:2017-01-05
Information query
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