- Patent Title: Method for producing semiconductor device and semiconductor device
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Application No.: US14753774Application Date: 2015-06-29
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Publication No.: US09768294B2Publication Date: 2017-09-19
- Inventor: Fujio Masuoka , Hiroki Nakamura
- Applicant: Unisantis Electronics Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: UNISANTIS ELECTRONICS SINGAPORE PTE. LTD.
- Current Assignee: UNISANTIS ELECTRONICS SINGAPORE PTE. LTD.
- Current Assignee Address: SG Singapore
- Agency: Brinks Gilson & Lione
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/02 ; H01L21/283 ; H01L21/306 ; H01L21/31 ; H01L21/311 ; H01L21/3205 ; H01L21/3213 ; H01L29/06 ; H01L29/16 ; H01L29/423 ; H01L29/66
Abstract:
A semiconductor device includes a fin-shaped semiconductor layer, a first insulating film formed around the fin-shaped semiconductor layer, a first metal film formed around the first insulating film, a pillar-shaped semiconductor layer formed on the fin-shaped semiconductor layer, a gate insulating film formed around the pillar-shaped semiconductor layer, a gate electrode formed around the gate insulating film and made of a third metal, a gate line connected to the gate electrode, a second insulating film formed around a sidewall of an upper portion of the pillar-shaped semiconductor layer, and a second metal film formed around the second insulating film. The upper portion of the pillar-shaped semiconductor layer and the second metal film are connected to each other, and an upper portion of the fin-shaped semiconductor layer and the first metal film are connected to each other.
Public/Granted literature
- US20150303301A1 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2015-10-22
Information query
IPC分类:
