Invention Grant
- Patent Title: Etching techniques for semiconductor devices
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Application No.: US14751095Application Date: 2015-06-25
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Publication No.: US09768327B2Publication Date: 2017-09-19
- Inventor: Robert Woehl , David Aaron Randolph Barkhouse , Paul Loscutoff
- Applicant: Robert Woehl , David Aaron Randolph Barkhouse , Paul Loscutoff
- Applicant Address: US CA San Jose FR Puteaux
- Assignee: SunPower Corporation,Total Marketing Services
- Current Assignee: SunPower Corporation,Total Marketing Services
- Current Assignee Address: US CA San Jose FR Puteaux
- Agency: Schwabe, Williamson & Wyatt P.C.
- Main IPC: H01L31/02
- IPC: H01L31/02 ; H01L31/06 ; H01L21/32 ; H01L31/18 ; H01L21/3213

Abstract:
Fabricating a semiconductor device can include forming a metal seed region over a substrate. The method can include forming a mask over a first portion of the metal seed region. The method can also include forming a metal region over the metal seed region and removing the mask. The method can include forming metal contact fingers on the semiconductor device, where the forming includes etching the first portion of the metal seed region with an etchant comprising an acid, an oxidizer and chloride ions.
Public/Granted literature
- US20160380122A1 ETCHING TECHNIQUES FOR SEMICONDUCTOR DEVICES Public/Granted day:2016-12-29
Information query
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