Invention Grant
- Patent Title: Semiconductor manufacturing method and semiconductor manufacturing apparatus
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Application No.: US14751309Application Date: 2015-06-26
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Publication No.: US09769880B2Publication Date: 2017-09-19
- Inventor: Takayuki Aoyama , Shinichi Kato
- Applicant: SCREEN Holdings Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: SCREEN Holdings Co., Ltd.
- Current Assignee: SCREEN Holdings Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Ostrolenk Faber LLP
- Priority: JP2014-185838 20140912
- Main IPC: H01L21/425
- IPC: H01L21/425 ; H05B3/00 ; H01L21/04 ; H01L21/67 ; H01L21/687 ; H01L21/285
Abstract:
Flash light is emitted from flash lamps to the surface of a semiconductor substrate on which a metal layer has been formed for one second or less to momentarily raise temperature on the surface of the semiconductor substrate including the metal layer and an impurity region to a processing temperature of 1000° C. or more. Heat treatment is performed by emitting flash light to the surface of the semiconductor substrate in a forming gas atmosphere containing hydrogen. By heating the surface of the semiconductor substrate to a high temperature in the forming gas atmosphere for an extremely short time period, contact resistance can be reduced without desorbing hydrogen taken in the vicinity of an interface of a gate oxide film for hydrogen termination.
Public/Granted literature
- US20160079085A1 SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR MANUFACTURING APPARATUS Public/Granted day:2016-03-17
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