A multilayer structure including a substrate and a first stack of a layer of SiO2 and a layer of material of the SiOxNyHz type positioned between the substrate and the layer of SiO2, in which the layer of SiO2 and the layer of material of the SiOxNyHz type have thicknesses (eB, eA) such that the thickness of the layer of SiO2 is less than or equal to 60 nm, the thickness of the layer of material of the SiOxNyHz type (eB) is more than twice the thickness (eA) of the layer of SiO2, and the sum of the thicknesses of the layer of SiO2 and of the layer of material of the SiOxNyHz type is between 100 nm and 500 nm, and in which z is strictly less than the ratio (x+y)/5, and advantageously z is strictly less than the ratio (x+y)/10.