Invention Grant
- Patent Title: Method for realizing heterogeneous III-V silicon photonic integrated circuits
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Application No.: US15147988Application Date: 2016-05-06
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Publication No.: US09772447B2Publication Date: 2017-09-26
- Inventor: Shahram Keyvaninia , Dries Van Thourhout , Gunther Roelkens
- Applicant: IMEC VZW , Universiteit Gent
- Applicant Address: BE Leuven BE Ghent
- Assignee: IMEC VZW,Universiteit Gent
- Current Assignee: IMEC VZW,Universiteit Gent
- Current Assignee Address: BE Leuven BE Ghent
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Priority: EP15166687 20150507
- Main IPC: G02B6/12
- IPC: G02B6/12 ; H01L23/52 ; H01L29/40 ; H01L21/00 ; H01L21/30 ; H01L21/46 ; H01S5/02 ; G02B6/122 ; H01L31/103 ; G02B6/14 ; G02B6/34 ; G02F1/017

Abstract:
A method of producing a heterogeneous photonic integrated circuit includes integrating at least one III-V hybrid device on a source substrate having at least a top silicon layer, and transferring by transfer-printing or by flip-chip bonding the III-V hybrid device and at least part of the top silicon layer of the source substrate to a semiconductor-on-insulator or dielectric-on-insulator host substrate.
Public/Granted literature
- US20160327759A1 Method for Realizing Heterogeneous III-V Silicon Photonic Integrated Circuits Public/Granted day:2016-11-10
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