Invention Grant
- Patent Title: Memory reliability using error-correcting code
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Application No.: US14707471Application Date: 2015-05-08
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Publication No.: US09772901B2Publication Date: 2017-09-26
- Inventor: George P. Hoekstra , Ravindraraj Ramaraju
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G11C16/34 ; G11C11/56 ; G11C29/52 ; G06F3/06 ; G06F11/07 ; G11C29/42
Abstract:
A method and system are provided for error correction in a memory. Error correction code (ECC) for data stored in a portion of the memory is enabled. A location and number of errors for the portion of the memory is then stored. It is determined if the number of errors exceeds a predetermined number of errors. If the number of errors exceeds the predetermined number, then the data stored in the portion of the memory is refreshed. If refreshing does not correct the errors, then a different ECC may be used.
Public/Granted literature
- US20160328286A1 MEMORY RELIABILITY USING ERROR-CORRECTING CODE Public/Granted day:2016-11-10
Information query
