Invention Grant
- Patent Title: Detection circuit for mixed asynchronous and synchronous memory operation
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Application No.: US13308333Application Date: 2011-11-30
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Publication No.: US09772969B2Publication Date: 2017-09-26
- Inventor: Simon J. Lovett
- Applicant: Simon J. Lovett
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G06F13/42
- IPC: G06F13/42 ; G06F13/16 ; G11C11/413 ; G11C7/10 ; G11C11/406 ; G11C11/4076

Abstract:
A memory access mode detection circuit and method for detecting and initiating memory access modes for a memory device The memory access mode detection circuit receives the memory address signals, the control signals, and the clock signal and generates a first mode detection signal in response to receipt of the memory address signals or a first combination of control signals. An first mode initiation signal is generated a time delay subsequent to the detection signal to initiate the first mode memory access operation. In response to receipt of a second combination of control signals and an active clock signal, the memory access mode detection circuit further generates a second mode detection signal to initiate a second mode memory access operation and to suppress generation of the first mode detection signal, thereby canceling the first mode memory access operation.
Public/Granted literature
- US20120072682A1 DETECTION CIRCUIT FOR MIXED ASYNCHRONOUS AND SYNCHRONOUS MEMORY OPERATION Public/Granted day:2012-03-22
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