Invention Grant
- Patent Title: Memory device with switchable sense amplifier
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Application No.: US15208640Application Date: 2016-07-13
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Publication No.: US09773544B2Publication Date: 2017-09-26
- Inventor: Jun-Myung Woo , Young-Seok Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2015-0127705 20150909
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/4091 ; G11C11/4094

Abstract:
A switchable sense amplifier includes a sense amplification unit and a plurality of switches. The sense amplification unit senses a voltage change of a bit line connected to a memory cell and amplifies a voltage difference between the bit line and a complementary bit line. The plurality of switches operate according to switching signals, and thus, enable the sense amplification unit to perform a pre-charging operation, an offset cancellation operation, a charge sharing operation, a sensing operation, and a re-storing operation. The sense amplifier may enhance an effective sensing margin by compensating for an offset of the sense amplifier, through an offset cancellation operation, and thus enhance performance of a memory apparatus.
Public/Granted literature
- US20170069368A1 MEMORY DEVICE WITH SWITCHABLE SENSE AMPLIFIER Public/Granted day:2017-03-09
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