A semiconductor memory device includes a first block of memory cells that includes a first word line above a substrate, a second word line above the first word line, and a third word line above the second word line, a first control line electrically connected to the first word line, a second control line electrically connected to the second word and between the first control line and the first block, and a third control line electrically connected to the third word line and between the second control line and the first block.