Invention Grant
- Patent Title: Memory read apparatus and methods
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Application No.: US15162238Application Date: 2016-05-23
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Publication No.: US09773564B2Publication Date: 2017-09-26
- Inventor: Toru Tanzawa
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C16/26 ; G11C16/04 ; G11C16/32 ; G11C11/56

Abstract:
Apparatus and methods are disclosed, including a method that raises an electrical potential of a plurality of access lines to a raised electrical potential, where each access line is associated with a respective charge storage device of a string of charge storage devices. The electrical potential of a selected one of the access lines is lowered, and a data state of the charge storage device associated with the selected access line is sensed while the electrical potential of the selected access line is being lowered. Additional apparatus and methods are described.
Public/Granted literature
- US20160267998A1 MEMORY READ APPARATUS AND METHODS Public/Granted day:2016-09-15
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