Invention Grant
- Patent Title: Reduced silicon-oxide-nitride-oxide-silicon (SONOS) flash memory program disturb
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Application No.: US15439086Application Date: 2017-02-22
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Publication No.: US09773567B1Publication Date: 2017-09-26
- Inventor: Zhongze Wang , Guoqing Chen , Paul Hoayun
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, Inc.
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/34
Abstract:
A method and apparatus for balancing voltage stress at a silicon-oxide-nitride-oxide-silicon (SONOS) flash memory array is disclosed. A particular cell of the SONOS flash memory array is selected for programming. A first voltage stress associated with a first SONOS transistor is determined if the particular cell is programmed. The first SONOS transistor is included in a first unselected cell of the SONOS flash memory array. A second voltage stress associated with a second SONOS transistor is determined if the particular cell is programmed. The first voltage stress and the second voltage stress are balanced prior to programming the particular cell.
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