Invention Grant
- Patent Title: MgO target for sputtering
-
Application No.: US14130438Application Date: 2012-06-29
-
Publication No.: US09773652B2Publication Date: 2017-09-26
- Inventor: Satoru Sano , Yoshihiro Nishimura , Takayuki Watanabe , Yuuzou Katou , Akira Ueki , Shinzo Mitomi , Masanobu Takasu , Yusuke Hara , Takaaki Tanaka
- Applicant: Satoru Sano , Yoshihiro Nishimura , Takayuki Watanabe , Yuuzou Katou , Akira Ueki , Shinzo Mitomi , Masanobu Takasu , Yusuke Hara , Takaaki Tanaka
- Applicant Address: JP Yamaguchi JP Fukuoka
- Assignee: UBE MATERIAL INDUSTRIES, LTD.,NIPPON TUNGSTEN CO., LTD.
- Current Assignee: UBE MATERIAL INDUSTRIES, LTD.,NIPPON TUNGSTEN CO., LTD.
- Current Assignee Address: JP Yamaguchi JP Fukuoka
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2011-147026 20110701; JP2012-011746 20120124
- International Application: PCT/JP2012/066789 WO 20120629
- International Announcement: WO2013/005690 WO 20130110
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/34 ; C04B35/053 ; C04B35/56 ; C04B35/58 ; C04B35/626 ; C04B35/645 ; G11B5/851 ; C23C14/08
Abstract:
Disclosed is an MgO target for sputtering, which can accelerate a film formation rate even when MgO is used as a target for sputtering in the formation of an MgO film. The MgO target for sputtering, which includes MgO and an electroconductive material as main components, and in which the electroconductive material is capable of imparting orientation to a MgO film when the MgO film containing the electroconductive material is formed by a DC sputtering.
Public/Granted literature
- US20140144775A1 MgO TARGET FOR SPUTTERING Public/Granted day:2014-05-29
Information query
