Invention Grant
- Patent Title: Method for fabricating a fine structure
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Application No.: US15173105Application Date: 2016-06-03
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Publication No.: US09773662B1Publication Date: 2017-09-26
- Inventor: Miin-Jang Chen , Chi-Wen Liu , Po-Hsien Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. , NATIONAL TAIWAN UNIVERSITY
- Applicant Address: TW Hsinchu TW Taipei
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee Address: TW Hsinchu TW Taipei
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L21/311 ; H01L29/78 ; H01L29/161 ; H01L29/66
Abstract:
In a method for fabricating a fine structure, a metal oxide layer is formed by using an atomic layer deposition over a substrate, and the metal oxide layer is removed. An interfacial oxide layer is formed between the metal oxide layer and the substrate. The interfacial oxide layer is an oxide of an element constituting the substrate, and the interfacial oxide layer is removed.
Information query
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