Invention Grant
- Patent Title: Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN and its alloys with AIN at low temperatures
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Application No.: US13916724Application Date: 2013-06-13
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Publication No.: US09773666B2Publication Date: 2017-09-26
- Inventor: Neeraj Nepal , Charles R. Eddy, Jr. , Nadeemmullah A. Mahadik , Syed B Qadri , Michael J. Mehl
- Applicant: Neeraj Nepal , Charles R. Eddy, Jr. , Nadeemmullah A. Mahadik , Syed B Qadri , Michael J. Mehl
- Applicant Address: US DC Washington
- Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agency: US Naval Research Laboratory
- Agent Roy Roberts
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/20 ; C30B25/02 ; C30B25/20 ; C30B29/38 ; C30B29/40
Abstract:
Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.
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