Invention Grant
- Patent Title: Apparatus and method for producing group III nitride semiconductor device and method for producing semiconductor wafer
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Application No.: US14548121Application Date: 2014-11-19
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Publication No.: US09773667B2Publication Date: 2017-09-26
- Inventor: Masaru Hori , Hiroki Kondo , Kenji Ishikawa , Osamu Oda
- Applicant: National University Corporation Nagoya University
- Applicant Address: JP Nagoya-Shi, Aichi
- Assignee: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
- Current Assignee: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
- Current Assignee Address: JP Nagoya-Shi, Aichi
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2013-239590 20131120
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/30 ; C23C16/511 ; C30B25/14 ; C23C16/452 ; C30B29/40
Abstract:
The production apparatus includes a shower head electrode, a susceptor for supporting a growth substrate, a first gas supply pipe, and a second gas supply pipe. The first gas supply pipe has at least one first gas exhaust outlet and supplies an organometallic gas containing Group III metal as a first gas, and the second gas supply pipe supplies a gas containing nitrogen gas as the second gas. The distance between the shower head electrode and the susceptor is greater than the distance between the first gas exhaust outlet of the first gas supply pipe and the susceptor.
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