Invention Grant
- Patent Title: Method for manufacturing semiconductor device
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Application No.: US14838628Application Date: 2015-08-28
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Publication No.: US09773707B2Publication Date: 2017-09-26
- Inventor: Guilei Wang , Jinbiao Liu , Jianfeng Gao , Junfeng Li , Chao Zhao
- Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: McDermott Will & Emery LLP
- Priority: CN201510351481 20150623
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L29/78 ; H01L29/66 ; H01L21/28 ; H01L21/3215
Abstract:
There is provided a method for manufacturing a semiconductor device, including: providing a semiconductor substrate having a plurality of openings formed thereon by removing a sacrificial gate; filling the openings with a top metal layer having compressive stress; and performing amorphous doping with respect to the top metal layer in a PMOS device region. Thus, it is possible to effectively improve carrier mobility of an NMOS device, and also to reduce the compressive stress in the PMOS device region to ensure a desired performance of the PMOS device.
Public/Granted literature
- US20160379829A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2016-12-29
Information query
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