A via opening is provided in an interconnect dielectric material. Prior to line opening formation, a continuous layer of a sacrificial material is formed lining the entirety of the via opening. An organic planarization layer (OPL) and a photoresist that contains a line pattern are formed above the interconnect dielectric material. The line pattern is then transferred into an upper portion of the interconnect dielectric material, while maintaining a portion of the OPL and a portion of the continuous layer of sacrificial material within a lower portion of the via opening. The remaining portions of the OPL and the sacrificial material are then removed from the bottom portion of the via opening. A combined via opening/line opening is provided in which the via opening has a well controlled profile/geometry. An interconnect metal or metal alloy can then be formed into the combined via opening/line opening.