Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15009085Application Date: 2016-01-28
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Publication No.: US09773745B2Publication Date: 2017-09-26
- Inventor: Ying-Ju Chen , Hsien-Wei Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/78 ; H01L23/31 ; H01L23/58 ; H01L21/56
Abstract:
A semiconductor device includes a substrate layer, a redistribution layer (RDL) disposed over the substrate layer, a conductive bump disposed over the RDL, and a molding disposed over the RDL and surrounding the conductive bump, wherein the molding includes a protruded portion laterally protruded from a sidewall of the substrate layer and away from the conductive bump.
Public/Granted literature
- US20160148886A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-05-26
Information query
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