Invention Grant
- Patent Title: Bonding wire for semiconductor device
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Application No.: US15116145Application Date: 2015-12-28
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Publication No.: US09773748B2Publication Date: 2017-09-26
- Inventor: Takashi Yamada , Daizo Oda , Ryo Oishi , Tomohiro Uno
- Applicant: NIPPON MICROMETAL CORPORATION , NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.
- Applicant Address: JP Saitama JP Tokyo
- Assignee: NIPPON MICROMETAL CORPORATION,NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.
- Current Assignee: NIPPON MICROMETAL CORPORATION,NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.
- Current Assignee Address: JP Saitama JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPPCT/JP2015/071002 20150723
- International Application: PCT/JP2015/086550 WO 20151228
- International Announcement: WO2017/013817 WO 20170126
- Main IPC: H01B5/00
- IPC: H01B5/00 ; H01L23/00

Abstract:
A bonding wire for a semiconductor device including a coating layer having Pd as a main component on the surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in 2nd bondability and excellent ball bondability in a high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.
Public/Granted literature
- US20170179064A1 BONDING WIRE FOR SEMICONDUCTOR DEVICE Public/Granted day:2017-06-22
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