Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15055278Application Date: 2016-02-26
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Publication No.: US09773769B2Publication Date: 2017-09-26
- Inventor: Satoshi Ikarashi
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2015-048663 20150311
- Main IPC: H01L25/00
- IPC: H01L25/00 ; H01L25/10 ; H01L23/498

Abstract:
A semiconductor device includes a substrate, a semiconductor package including a semiconductor chip, and a connector between the substrate and the semiconductor package, the connector having opposing first and second planar surfaces, the first planar surface in contact with the substrate and the second planar surface in contact with the semiconductor package. The connector also includes a plurality of wires extending between the first and second planar surfaces to electrically connect electrodes of the substrate to electrodes of the semiconductor package.
Public/Granted literature
- US20160268242A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-09-15
Information query
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