A semiconductor device may include a first doped region, a second doped region, two fin members, and an isolation member. The first doped region may have a first dopant type. The second doped region may have a second dopant type and may be positioned between two portions of the first doped region. The two fin members may overlap at least one of the first doped region and the second doped region. The isolation member may be formed of a dielectric material and may be positioned between the two fin members. The second doped region may be positioned between the isolation member and the first doped region.