Invention Grant
- Patent Title: Semiconductor structure with resistor layer and method for forming the same
-
Application No.: US14856813Application Date: 2015-09-17
-
Publication No.: US09773779B2Publication Date: 2017-09-26
- Inventor: I-Tseng Chen , Hon-Lin Huang , Chun-Hsien Huang , Yu-Hung Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L27/06 ; H01L21/8234 ; H01L21/02 ; H01L49/02
Abstract:
A semiconductor device structure including a resistor layer is provided. The semiconductor device structure includes a gate structure formed over the first region of the substrate and an inter-layer dielectric (ILD) layer formed adjacent to the gate structure. The semiconductor device structure further includes a resistor layer is formed over the ILD layer over the second region of the substrate, and the major structure of the resistor layer is amorphous.
Public/Granted literature
- US20170040313A1 SEMICONDUCTOR STRUCTURE WITH RESISTOR LAYER AND METHOD FOR FORMING THE SAME Public/Granted day:2017-02-09
Information query
IPC分类:
