Invention Grant
- Patent Title: Semiconductor structure and method for manufacturing the same
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Application No.: US13594296Application Date: 2012-08-24
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Publication No.: US09773784B2Publication Date: 2017-09-26
- Inventor: Chieh-Chih Chen , Cheng-Chi Lin , Shih-Chin Lien , Shyi-Yuan Wu
- Applicant: Chieh-Chih Chen , Cheng-Chi Lin , Shih-Chin Lien , Shyi-Yuan Wu
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/088 ; H01L21/761 ; H01L29/66 ; H01L21/8234 ; H01L29/423 ; H01L29/06 ; H01L29/08
Abstract:
A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a substrate, a device region, a first doped region and a gate structure. The first doped region is formed in the substrate adjacent to the device region. The gate structure is on the first doped region. The first doped region is overlapped the gate structure.
Public/Granted literature
- US20140054656A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-02-27
Information query
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