Invention Grant
- Patent Title: Semiconductor device and method for forming the same
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Application No.: US15456605Application Date: 2017-03-13
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Publication No.: US09773790B1Publication Date: 2017-09-26
- Inventor: Chien-Ting Ho , Li-Wei Feng , Ying-Chiao Wang , Yu-Chieh Lin
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian province
- Agent Winston Hsu
- Priority: CN201611129233 20161209
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/423 ; H01L29/45
Abstract:
A semiconductor device includes a substrate including at least a memory region defined therein and a plurality of memory cells formed in the memory region, a plurality of first connecting structures, a plurality of second connecting structures, a plurality of dummy nodes respectively disposed on the first connecting structures, and a plurality of first storage nodes respectively disposed on the second connecting structures. The first connecting structures respectively include a conductive portion and a first metal portion, and the second connecting structures respectively include the conductive portion and a second metal portion. The first metal portion and the second metal portion include the same material. And the first metal portion and the second metal portion include different heights.
Information query
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