Invention Grant
- Patent Title: Transistor performance modification with stressor structures
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Application No.: US12576310Application Date: 2009-10-09
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Publication No.: US09773793B2Publication Date: 2017-09-26
- Inventor: Scott R. Summerfelt , Rajni J. Aggarwal , Shaoping Tang
- Applicant: Scott R. Summerfelt , Rajni J. Aggarwal , Shaoping Tang
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTUMENTS INCORPORATED
- Current Assignee: TEXAS INSTUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Rose Alyssa Keagy; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/00 ; H01L27/11507 ; H01L49/02 ; H01L29/78
Abstract:
A transistor structure with stress enhancement geometry aligned above the channel region. Also, a transistor structure with stress enhancement geometries located above and aligned with opposite sides of the channel region. Furthermore, methods for fabricating integrated circuits containing transistors with stress enhancement geometries.
Public/Granted literature
- US20110084323A1 Transistor Performance Modification with Stressor Structures Public/Granted day:2011-04-14
Information query
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