This disclosure is directed to techniques for fabricating CMOS devices for SRAM cells with resistors formed along transistor well sidewall edges by self-aligned, angled implantation, which may enable more compact SRAM architecture with SEU mitigation, such as for space-based or other radiation-hardened applications. An example method includes implanting a dopant into a doped semiconductor well covered by a barrier, wherein the doped semiconductor well is disposed on a buried insulator and wherein the dopant is of opposite doping type to the doped semiconductor well, thereby forming a resistor on an edge of the doped semiconductor well, wherein the resistor has the opposite doping type. The method further includes forming a second insulator adjacent to the resistor, removing the barrier, and forming agate layer on the doped semiconductor well, thereby forming a gate adjacent to the doped semiconductor well and the resistor.