A semiconductor device includes a substrate having an upper surface layer of a second conduction type formed at an upper surface side, a drift layer of a first conduction type formed under the upper surface layer, a buffer layer of the first conduction type formed under the drift layer, and a lower surface layer of the second conduction type formed under the buffer layer, the buffer layer includes a plurality of upper buffer layers provided apart from each other, and a plurality of lower buffer layers provided apart from each other between the plurality of upper buffer layers and the lower surface layer, wherein the plurality of upper buffer layers are formed so that average impurity concentrations in first sections each extending from the upper end of one of the upper buffer layers to the next lower buffer layer are unified as a first concentration.