- Patent Title: Semiconductor composition containing iron, dysprosium, and terbium
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Application No.: US15194715Application Date: 2016-06-28
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Publication No.: US09773876B2Publication Date: 2017-09-26
- Inventor: Raphael C. Pooser , Benjamin J. Lawrie , Arthur P. Baddorf , Abhinav Malasi , Humaira Taz , Annettee E. Farah , Ramakrishnan Kalyanaraman , Gerd Josef Mansfred Duscher , Maulik K. Patel
- Applicant: UT-Battelle, LLC , University of Tennessee Research Foundation
- Applicant Address: US TN Oak Ridge
- Assignee: UT-Battelle, LLC
- Current Assignee: UT-Battelle, LLC
- Current Assignee Address: US TN Oak Ridge
- Agent Edna I. Gergel; Joseph A. Marasco
- Main IPC: C03C4/00
- IPC: C03C4/00 ; H01L29/24 ; H01L29/786 ; C03C3/12 ; C03C17/02 ; C23C14/08

Abstract:
An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.
Public/Granted literature
- US20170005170A1 Semiconductor Composition Containing Iron, Dysprosium, and Terbium Public/Granted day:2017-01-05
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