Invention Grant
- Patent Title: III-nitride transistor with engineered substrate
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Application No.: US13838546Application Date: 2013-03-15
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Publication No.: US09773884B2Publication Date: 2017-09-26
- Inventor: Rongming Chu , Zijan Ray Li , Karim Boutros
- Applicant: HRL LABORATORIES, LLC
- Applicant Address: US CA Malibu
- Assignee: HRL Laboratories, LLC
- Current Assignee: HRL Laboratories, LLC
- Current Assignee Address: US CA Malibu
- Agency: Ladas & Parry
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/06 ; H01L21/683 ; H01L29/66 ; H01L29/20

Abstract:
A transistor includes a buffer layer, a channel layer over the buffer layer, a barrier layer over the channel layer, a source electrode electrically connected to the channel layer, a drain electrode electrically connected to the channel layer, a gate electrode on the barrier layer between the source electrode and the drain electrode, a backside metal layer, a substrate between a first portion of the buffer layer and the backside metal layer; and a dielectric between a second portion of the buffer layer and the backside metal layer.
Public/Granted literature
- US20140264361A1 III-NITRIDE TRANSISTOR WITH ENGINEERED SUBSTRATE Public/Granted day:2014-09-18
Information query
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