The present disclosure provides a quantum dot light-emitting diode and a manufacturing method thereof. The quantum dot light-emitting diode, comprising a base plate, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode stacked on the base plate in sequence. The quantum dot light-emitting diode further comprises a hole planarized layer formed between the hole transport layer and the quantum dot light-emitting layer, the quantum dot light-emitting layer comprises a first quantum dot sublayer, a second quantum dot sublayer and a third quantum dot sublayer stacked in sequence, the first quantum dot sublayer and the third quantum dot sublayer are negatively charged, and the second quantum dot sublayer is positively charged.