Invention Grant
- Patent Title: Optimal device structures for back-end-of-line compatible mixed ionic electronic conductors materials
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Application No.: US15225914Application Date: 2016-08-02
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Publication No.: US09773978B1Publication Date: 2017-09-26
- Inventor: Gloria Wing Yun Fraczak , Hiroyuki Miyazoe , Kumar Virwani
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L29/16 ; H01L21/00 ; H01L27/24
Abstract:
A mixed ionic electron conductor (MIEC)-based memory cell access device is provided. The MIEC-based memory cell access device includes a MIEC material portion located between a bottom electrode and a top electrode. A contact area between the MIEC material portion and the bottom electrode is substantially the same as a contact area between the MIEC material portion and the top electrode.
Information query
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