Invention Grant
- Patent Title: Reducing MEMS stiction by deposition of nanoclusters
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Application No.: US15051264Application Date: 2016-02-23
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Publication No.: US09776853B2Publication Date: 2017-10-03
- Inventor: Robert F. Steimle , Ruben B. Montez
- Applicant: Freescale Semiconductor, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: B81B3/00
- IPC: B81B3/00 ; B81C1/00 ; G01P15/08

Abstract:
A mechanism for reducing stiction in a MEMS device by decreasing surface area between two surfaces that can come into close contact is provided. Reduction in contact surface area is achieved by increasing surface roughness of one or both of the surfaces. The increased roughness is provided by forming a micro-masking layer on a sacrificial layer used in formation of the MEMS device, and then etching the surface of the sacrificial layer. The micro-masking layer can be formed using nanoclusters. When a next portion of the MEMS device is formed on the sacrificial layer, this portion will take on the roughness characteristics imparted on the sacrificial layer by the etch process. The rougher surface decreases the surface area available for contact in the MEMS device and, in turn, decreases the area through which stiction can be imparted.
Public/Granted literature
- US20160167944A1 REDUCING MEMS STICTION BY DEPOSITION OF NANOCLUSTERS Public/Granted day:2016-06-16
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