Invention Grant
- Patent Title: Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
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Application No.: US14591544Application Date: 2015-01-07
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Publication No.: US09777370B2Publication Date: 2017-10-03
- Inventor: Atsushi Sano , Yoshiro Hirose
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2014-003756 20140110
- Main IPC: C23C16/36
- IPC: C23C16/36 ; C23C16/30 ; C23C16/455 ; H01L21/02
Abstract:
A method of manufacturing a semiconductor device, including forming a laminated film on a substrate by performing a cycle a first predetermined number of times. The cycle includes forming a first film which contains a predetermined element, boron, and nitrogen, and forming a second film which contains boron and nitrogen. A composition ratio of boron to nitrogen in the second film is different from that in the first film. The first film and the second film are laminated to form the laminated film.
Public/Granted literature
- US09816181B2 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium Public/Granted day:2017-11-14
Information query
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