Invention Grant
- Patent Title: Film forming method and film forming device
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Application No.: US14411525Application Date: 2013-06-11
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Publication No.: US09777377B2Publication Date: 2017-10-03
- Inventor: Shigeyuki Okura , Hajime Yamanaka
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2012-150263 20120704
- International Application: PCT/JP2013/066015 WO 20130611
- International Announcement: WO2014/007028 WO 20140109
- Main IPC: C23C16/52
- IPC: C23C16/52 ; C23C16/448 ; C23C16/455 ; C23C16/44

Abstract:
STEP 1 (Pressure increasing step) increases pressure within a raw material container to first pressure by supplying carrier gas to the inside of the raw material container by PCV. STEP 2 (Pressure decreasing step) decreases the pressure within the raw material container to second pressure by operating an exhaust device and discarding the raw material gas from a raw material gas supply pipe via an exhaust bypass pipe. STEP 3 (Stabilization step) stabilizes the vaporization efficiency for vaporizing the raw material inside the raw material container by operating the exhaust device and discarding the raw material gas while introducing the carrier gas into the raw material container. STEP 4 (Film forming step) supplies the raw material gas to the inside of the processing container via the raw material gas supply pipe and deposits a thin film on a wafer by CVD.
Public/Granted literature
- US20150152557A1 Film Forming Method and Film Forming Device Public/Granted day:2015-06-04
Information query
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