- Patent Title: Chemistry additives and process for cobalt film electrodeposition
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Application No.: US14663279Application Date: 2015-03-19
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Publication No.: US09777386B2Publication Date: 2017-10-03
- Inventor: Natalia V. Doubina , Matthew A. Rigsby , Jonathan David Reid
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: C25D3/12
- IPC: C25D3/12 ; C25D3/18 ; C25D7/12 ; C25D17/00 ; C25D5/34 ; H01L21/288 ; H01L21/768 ; H01L23/532

Abstract:
Various embodiments herein relate to methods and apparatus for electroplating cobalt on a substrate. In many cases, the cobalt is electroplated into recessed features. The recessed features may include a seed layer such as a cobalt seed layer. Electroplating may occur through a bottom-up mechanism. The bottom-up mechanism may be achieved by using particular additives (e.g., accelerator and suppressor), which may be present in the electrolyte at particular concentrations. Further, leveler, wetting agent, and/or brightening agents may be used to promote high quality plating results. In various embodiments, the substrate is pre-treated to remove oxide (and in some cases carbon impurities) from the seed layer before electroplating takes place. Further, the electrolyte may have a particular conductivity to promote uniform plating results across the face of the substrate.
Public/Granted literature
- US20160273117A1 CHEMISTRY ADDITIVES AND PROCESS FOR COBALT FILM ELECTRODEPOSITION Public/Granted day:2016-09-22
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