A method for producing a SiC single crystal, comprising using a Si—C solution having a temperature gradient in which the temperature decreases from the interior toward the surface to grow a SiC single crystal from a seed crystal substrate, wherein the Si—C solution includes Si and Cr, the boron density difference Bs−Bg between the boron density Bs in the seed crystal substrate and the boron density Bg in the growing single crystal is 1×1017/cm3 or greater, the chromium density difference Crg−Crs between the chromium density Crs in the seed crystal substrate and the chromium density Crg in the growing single crystal is 1×1016/cm3 or greater, and the nitrogen density difference Ng−Ns between the nitrogen density Ns in the seed crystal substrate and the nitrogen density Ng in the growing single crystal is 3.5×1018/cm3 to 5.8×1018/cm3.